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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. C KTC3114 EPITAXIAL PLANAR NPN TRANSISTOR A B E F G D FEATURE High DC Current Gain : hFE=600 3600. H MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 50 50 5 150 30 1.5 150 -55 150 UNIT V V V mA mA W N J K L M O 1 2 3 P 1. EMITTER 2. COLLECTOR 3. BASE DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ 3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO ) TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA f=100Hz, Rg=10k VCE=6V, IC=0.1mA f=1kHz, Rg=10k MIN. 600 100 TYP. 0.1 250 3.5 0.5 0.3 MAX. 0.1 0.1 3600 0.25 V MHz pF dB dB UNIT A A SYMBOL hFE(Note) VCE(sat) fT Cob NF(1) Noise Figure NF(2) Note: hFE Classification A:600 1800, B:1200 3600 2003. 7. 24 Revision No : 1 1/3 KTC3114 I C - VCE 160 COLLECTOR CURRENT I C (mA) 140 120 100 80 60 40 20 0 0 1 2 3 4 COMMON EMITTER Ta=25 C 400 h FE - I C 5k 3k 100 80 60 50 40 30 20 0 Ta=100 C Ta=25 C Ta=-25 C DC CURRENT GAIN h FE 200 1k 500 300 100 50 30 0.1 I B =10A COMMON EMITTER VCE =6V 5 6 0.3 1 3 10 30 100 200 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) I C - V BE 160 COLLECTOR CURRENT I C (mA) 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER VCE =6V VCE(sat) - I C 1 0.5 0.3 COMMON EMITTER IC / I B =10 Ta=100 C Ta=25 C Ta=-25 C 0.1 0.05 0.03 Ta=100 C Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 200 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) V BE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 3 COMMON EMITTER I C /I B =10 Ta=25 C f T - IE TRANSITION FREQUENCY f T (MHz) 2k 1k 500 300 100 50 30 10 -0.1 COMMON EMITTER V CE =10V Ta=25 C 10 1 0.5 0.3 0.1 0.1 0.3 1 3 10 30 100 200 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) EMITTER CURRENT I E (mA) 2003. 7. 24 Revision No : 1 2/3 KTC3114 C ob - V CB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 100 50 30 I E =0 f=1MHz Ta=25 C 10 5 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) 2003. 7. 24 Revision No : 1 3/3 |
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